n型砷化镓中0.95 eV光致发光中心的鉴定与结构

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-12-31 DOI:10.1109/SIM.1996.571103

M. Reshchikov, A. Gutkin, V. Sedov

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摘要

我们研究了掺杂Te、S、Sn或Si的GaAs中0.95 eV光致发光带的应力依赖性。结果表明，该配合物除了具有V/sub As/V/sub Ga/间隙外，还具有一个浅层供体。在这些复合物中发现了一种杨-泰勒扭曲的排列。

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Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs

We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V/sub As/V/sub Ga/. An alignment of the Jahn-Teller distortions has been found for these complexes.

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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