电导率调制轴上4H-SiC 10+ kV PiN二极管

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2015-05-10 DOI:10.1109/ISPSD.2015.7123441

Arash Salemi, H. Elahipanah, B. Buono, A. Hallén, J. Hassan, P. Bergman, G. Malm, C. Zetterling, M. Ostling

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引用次数: 16

摘要

采用低正向压降(100 A/cm2时VF = 3.3 V)和低差分导通电阻(RON = 3.4 mΩ.cm2)的轴向4H-SiC制备了无退化的超高压(>10 kV) PiN二极管，并通过器件仿真进行了测量和分析。该器件在高达300°C的宽温度范围内显示稳定的导通特性。它们显示高达10 kV的无击穿，即迄今为止使用轴上的4H-SiC器件的最高阻断能力。用时间分辨光致发光(TRPL)技术在室温下测量了外延生长后的少数载流子寿命τP。在器件制造后，利用开路电压衰减(OCVD)在500k下再次测量τP。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (V_F = 3.3 V at 100 A/cm²) and low differential on-resistance (R_ON = 3.4 mΩ.cm²) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 °C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (τ_P) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The τ_P is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.

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来源期刊

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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