E. Uccelli, N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. Hartmann, J. Fompeyrine
{"title":"在Si和Ge表面生长III/V层作为混合CMOS的直接晶圆键合路径","authors":"E. Uccelli, N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. Hartmann, J. Fompeyrine","doi":"10.1109/ISTDM.2014.6874703","DOIUrl":null,"url":null,"abstract":"As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS\",\"authors\":\"E. Uccelli, N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. Hartmann, J. Fompeyrine\",\"doi\":\"10.1109/ISTDM.2014.6874703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
