{"title":"提高雷电浪涌保护半导体器件浪涌能力的研究","authors":"H. Satoh","doi":"10.1109/ISEMC.1991.148278","DOIUrl":null,"url":null,"abstract":"Design techniques for increasing the surge capability of a bidirectional SCR (silicon controlled rectifier) lightning surge protection device for communications equipment are described. The relationships between surge capability and doping profiles with different p-base widths and n-base impurity concentrations are studied by analyzing failure modes and surge response characteristics. A narrow p-base width is effective for increasing surge capability because it can reduce turn-on energy dissipation that leads to hot-spot failure. Furthermore, reducing the on-state energy dissipation can increase surge capability without increasing device size.<<ETX>>","PeriodicalId":243730,"journal":{"name":"IEEE 1991 International Symposium on Electromagnetic Compatibility","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Study on increasing the surge capability of a lightning surge protection semiconductor device\",\"authors\":\"H. Satoh\",\"doi\":\"10.1109/ISEMC.1991.148278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design techniques for increasing the surge capability of a bidirectional SCR (silicon controlled rectifier) lightning surge protection device for communications equipment are described. The relationships between surge capability and doping profiles with different p-base widths and n-base impurity concentrations are studied by analyzing failure modes and surge response characteristics. A narrow p-base width is effective for increasing surge capability because it can reduce turn-on energy dissipation that leads to hot-spot failure. Furthermore, reducing the on-state energy dissipation can increase surge capability without increasing device size.<<ETX>>\",\"PeriodicalId\":243730,\"journal\":{\"name\":\"IEEE 1991 International Symposium on Electromagnetic Compatibility\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1991 International Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.1991.148278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1991 International Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.1991.148278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on increasing the surge capability of a lightning surge protection semiconductor device
Design techniques for increasing the surge capability of a bidirectional SCR (silicon controlled rectifier) lightning surge protection device for communications equipment are described. The relationships between surge capability and doping profiles with different p-base widths and n-base impurity concentrations are studied by analyzing failure modes and surge response characteristics. A narrow p-base width is effective for increasing surge capability because it can reduce turn-on energy dissipation that leads to hot-spot failure. Furthermore, reducing the on-state energy dissipation can increase surge capability without increasing device size.<>
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