Dann Morillon, P. Masson, F. Julien, P. Lorenzini, Jérôme Goy, C. Pribat, O. Gourhant, T. Kempf, J. Ogier, A. Villaret, G. Ghezzi, N. Cherault, S. Niel
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Gate oxide degradation assessment by electrical stress and capacitance measurements
In this paper, the reliability of thick SiO2 gate oxides is assessed using quasi-static and multi-frequency capacitance measurements after constant current stress. A comprehensive study of oxide wear-out is presented, highlighting trapping mechanisms and switching states generation occurring during stress at high electric fields. Measurements are performed on furnace grown and HTO-based oxides and the correlation with lifetimes extrapolated from time-dependent dielectric breakdown is discussed.
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