InP衬底InGaAs平面Gunn二极管的模拟与制备

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562607

V. Papageorgiou, A. Khalid, Chong Li, D. Cumming

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引用次数: 0

摘要

本文介绍了在InP衬底上基于InGaAs的第一个平面Gunn二极管的仿真和制作。使用Sentaurus Device软件模拟了Gunn个设备。所制备的平面Gunn二极管长1.3 μm，宽120 μm，测量结果与模拟结果吻合良好。

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Simulation and fabrication of InGaAs planar Gunn diode on InP substrate

This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 μm long and 120 micron wide and the measured and simulated results are in excellent agreement.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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