低功率环形振荡器工艺和温度补偿的复合电阻技术

H. Çetinkaya, A. Zeki, Alper Girgin, T. Karalar
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引用次数: 2

摘要

电流控制振荡器采用了一种工艺和温度补偿技术,即复合电阻。核心是一个环形振荡器(RO),在室温(25℃)下振荡频率为1 MHz,占空比为50%。在-20℃~ 100℃范围内实现温度补偿,在相同温度范围内,1 MHz和0.5 MHz输出频率的误差小于±1% (3σ)。因此,2个输出是温度补偿。振荡器核心功耗为750 nA,偏置电路功耗为360 nA,整个系统功耗为1.256 μA,相当于1.6 V电池电压下的2 μW。该设计采用0.18 μm混合信号RF Salicide (1P6M, 1.8V/3.3V) CMOS工艺实现,占地130 μm × 285 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Composite Resistor Technique for Process and Temperature Compensations of Low Power Ring Oscillators
A process and temperature compensation technique, namely, composite resistor, is adopted for the current controlled oscillators (CCOs). The core is a ring oscillator (RO) and oscillates at 1 MHz at room temperature (25°C) with 50% duty cycle. The temperature compensation is achieved between -20°C and 100°C, and after trimming, the inaccuracies of the output frequencies, 1 MHz, and 0.5 MHz, are below ±1% (3σ) in the same temperature range. As a result, 2 outputs are temperature compensated. The oscillator core consumes 750 nA, the biasing circuit consumes 360 nA, and the complete system consumes 1.256 μA, corresponding to 2 μW at 1.6 V battery voltage. The design, occupying 130 μm × 285 μm die area, is realized in a 0.18 μm Mixed-Signal RF Salicide (1P6M, 1.8V/3.3V) CMOS process.
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