超低R/sub - ons/ in 4H-SiC垂直MOSFET:埋沟道双外延MOSFET

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240035

S. Harada, M. Okamoto, T. Yatsuo, K. Adachi, K. Fukuda, K. Arai

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引用次数: 5

摘要

本研究开发了一种新型的4H-SiC垂直MOSFET器件结构，称为双外延MOSFET (demofet)。在该结构中，p阱由两个p型外延层组成，而p阱之间的n型区是通过低剂量的n型离子注入形成的。在上p/sup /外延层的表面形成埋置沟道。当阻断电压为600 V时，在15 V栅极电压下，制备的demoset的导通电阻为8.5 m/spl Omega/cm/sup 2/。模拟结果表明，这些特征在很大程度上取决于p井之间n型区域的氮分布。

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An ultra-low R/sub ons/ in 4H-SiC vertical MOSFET: buried channel double-epitaxial MOSFET

This study developed a novel 4H-SiC vertical MOSFET device structure, named double-epitaxial MOSFET (DEMOSFET). In the structure, the p-well is composed of two p-type epitaxial layers, while an n-type region between the p-wells is formed by low-dose n-type ion implantation. A buried channel is formed at the surface of the upper p/sup -/ epitaxial layer. A fabricated DEMOSFET showed an on-resistance of 8.5 m/spl Omega/cm/sup 2/ at a gate voltage of 15 V when the blocking voltage is 600 V. The simulation results revealed that the characteristics largely depend on the profile of the nitrogen in the n-type region between the p-wells.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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