用于1.3-/spl μ m光纤网络的稀释氮化物边缘发射和垂直腔激光器

Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551) Pub Date : 2002-08-07 DOI:10.1109/ICTON.2002.1009530

T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, M. Pessa

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引用次数: 0

摘要

本文报道了利用分子束外延技术在砷化镓衬底上单核生长的新一代半导体激光器。1.32-/spl μ m单量子阱脊波导边发射激光器具有低阈值电流密度563 a /cm/sup 2/，最大连续波光输出功率为40 mW。由GaAs/AlAs分布Bragg反射器和专门设计的Ga/sub 0.65/In/sub 0.35/N/sub 0.014/As/sub 0.986//GaAs量子阱组成的光泵浦垂直腔面发射激光器也得到了发展。得到了3.5 mW无透镜耦合到标准单模光纤中的输出功率。

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Diluted nitride edge-emitting and vertical-cavity lasers for 1.3-/spl mu/m fibre-optic networks

We report on the next generation state-of-the-art semiconductor lasers grown on GaAs substrates in a single nucleation process by molecular beam epitaxy. 1.32-/spl mu/m single-quantum well ridge-waveguide edge-emitting lasers exhibit a low threshold current density of 563 A/cm/sup 2/ while the maximum continuous-wave optical output power is 40 mW. Optically pumped vertical-cavity surface-emitting lasers, which consist of GaAs/AlAs distributed Bragg reflectors and specially designed Ga/sub 0.65/In/sub 0.35/N/sub 0.014/As/sub 0.986//GaAs quantum wells, were also grown. An output power of 3.5 mW coupled lenslessly into a standard single-mode fibre is obtained.

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Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551)

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