石墨烯与金属界面处的费米能级调制

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242334

Y. Kim, H. Lee, K. Chang, C. Cho, S. K. Lee, B. H. Lee

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引用次数: 0

摘要

石墨烯与金属触点接触的费米能级是石墨烯基器件设计的一个至关重要的因素。石墨烯上金属的费米水平钉住行为会限制接触电阻的降低和其他器件的操作，特别是在高工作功能的金属外壳中。我们报告说，在20atm以上的高压下进行氢退火可以大大缓解这个问题。

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Fermi level modulation at the interface of graphene and metal

The Fermi level of graphene in contact with the metal contact is a critically important factor for graphene-based device design. Fermi level pinning like behavior at the metal on a graphene can limit the contact resistance reduction and other device operations, especially in high workfunction metal cases. We report that this problem can be substantially alleviated by the hydrogen anneal at high pressure over 20atm.

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2017 Silicon Nanoelectronics Workshop (SNW)

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