高可靠的NAND快闪记忆体，使用al2o3插入的聚间介电体

2010 IEEE International Memory Workshop Pub Date : 2010-05-16 DOI:10.1109/IMW.2010.5488413

Sung-Hae Lee, B. Koo, K. Hwang, Siyoung Choi, J. Moon

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引用次数: 0

摘要

通过OAO IPD EOT的缩放成功实现了器件性能的提升，表明OAO IPD适用于需要大规模缩放IPD EOT的40nm以下器件。用氧化铝陷阱的热离子发射解释了OAO IPD在高温下的电荷损失。在100°C以上，通过监测Vth位移得到氧化铝的阱分布。OAO IPD在室温下表现出良好的数据保留率，这与陷阱剖面相一致。

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Highly-reliable NAND flash memory using Al2O3-inserted inter-poly dielectric

The improvement of device performances has been achieved successfully through OAO IPD EOT scaling, which shows that OAO IPD is applicable to sub-40nm devices which require aggressive scaling of IPD EOT. Charge loss of OAO IPD at high temperature is explained by thermionic emission of alumina traps. Trap profiles of alumina were obtained by monitoring Vth shift above 100°C. OAO IPD shows good data retention at room temperature, which is consistent with trap profiles.

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2010 IEEE International Memory Workshop

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