V. Sandana, D. Rogers, F. Hosseini Teherani, P. Bove, N. Ben Sedrine, M. Correia, T. Monteiro, R. Mcclintock, M. Razeghi
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引用次数: 7
摘要
采用脉冲激光沉积技术在FTO/玻璃和体水热ZnO衬底上制备了NiO/ZnO异质结构。x射线衍射和室温(RT)拉曼研究结果与(0002)取向纤锌矿ZnO和(111)取向fcc NiO的形成一致。RT光传输研究表明,NiO和ZnO的带隙能值分别为~3.70 eV和~3.30 eV,整个ZnO/NiO/FTO/玻璃堆在大部分可见光谱上的透射率超过80%。在PLD生长过程中使用阴影掩膜制备了横向p-n异质结台面(~6mm x 6mm)。n-n和p-p测量表明,Ti/Au接触对NiO、ZnO和FTO产生欧姆响应。两种异质结均具有整流I/V特性。FTO/玻璃上结的正向偏置电流(+10V时为243mA)比ZnO上结的正向偏置电流高出5个数量级以上。在~ 10-7 A时(10V的反向偏置),ZnO衬底上的异质结漏电流比FTO上的低约两个数量级。总体而言,横向p-NiO/n- ZnO/FTO/玻璃器件被证明远远优于直接在大块n-ZnO衬底上生长p-NiO形成的器件,并且具有电性能和可见波长透明度的组合,可以使其易于用于各种第三代透明电子应用。
Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD
NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002) oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of ~3.70 eV and ~3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (~6mm x 6mm) were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for the junction formed on bulk ZnO. At ~ 10-7 A (for 10V of reverse bias) the heterojunction leakage current was approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/n- ZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in various third generation transparent electronics applications.