氮化氧化铪缓冲层在硅衬底上的形成及GaN- si混合光学MEMS中GaN量子阱晶体的生长

H. Sameshima, M. Wakui, R. Ito, F. Hu, K. Hane
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引用次数: 0

摘要

为了实现GaN光源与MEMS的单片集成,我们采用分子束外延(MBE)技术在Si衬底上生长GaN晶体。由于HfN的晶格常数与GaN的晶格常数接近(只有0.35%的失配),因此在HfN薄膜上生长GaN晶体具有优势。另一方面,HfO2薄膜是波导、介电层和牺牲层的良好候选材料。本研究采用MBE射频氮等离子体源对HfO2膜进行表面硝化生成HfN层。氮化HfO2层上生长的GaN晶体形貌较好。氮化HfO2层上生长的GaN量子阱的光致发光效率优于在Si衬底上生长的量子阱。作为一种简单的混合照明器件结构,在Si衬底上制作了GaN光栅,并测量了GaN衍射光栅的发光强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Formation of a nitrified hafnium oxide buffer layer on silicon substrate and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS
We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified HfO2 layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified HfO2 layer was better than that on Si substrate. As a simple hybrid lighting device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.
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