横向间隔对无结纳米线晶体管有效沟道长度的影响

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309260

R. Trevisoli, R. Doria, M. de Souza, M. Pavanello

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引用次数: 3

摘要

本文深入分析了横向间隔对无结纳米线晶体管性能的影响。提出了考虑隔片对器件电气性能影响的解析模型，并通过数值仿真结果进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Lateral spacers influence on the effective channel length of junctionless nanowire transistors

This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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