带测试电路的自适应功率门控在线表征能量弯曲活动

2012 IEEE 30th VLSI Test Symposium (VTS) Pub Date : 2012-04-23 DOI:10.1109/VTS.2012.6231077

A. Trivedi, S. Mukhopadhyay

{"title":"带测试电路的自适应功率门控在线表征能量弯曲活动","authors":"A. Trivedi, S. Mukhopadhyay","doi":"10.1109/VTS.2012.6231077","DOIUrl":null,"url":null,"abstract":"A test circuit is presented for post-silicon and on-line characterization of the energy-inflection activity of power-gated circuits (the activity when overhead energy is equal to leakage savings) under static (process) and dynamic (voltage/temperature/input) variations. The test circuit is applied to design self-adaptive power-gating for energy-efficient SRAM.","PeriodicalId":169611,"journal":{"name":"2012 IEEE 30th VLSI Test Symposium (VTS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Self-adaptive power gating with test circuit for on-line characterization of energy inflection activity\",\"authors\":\"A. Trivedi, S. Mukhopadhyay\",\"doi\":\"10.1109/VTS.2012.6231077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A test circuit is presented for post-silicon and on-line characterization of the energy-inflection activity of power-gated circuits (the activity when overhead energy is equal to leakage savings) under static (process) and dynamic (voltage/temperature/input) variations. The test circuit is applied to design self-adaptive power-gating for energy-efficient SRAM.\",\"PeriodicalId\":169611,\"journal\":{\"name\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2012.6231077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 30th VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2012.6231077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种测试电路，用于静态(过程)和动态(电压/温度/输入)变化下功率门控电路的能量弯曲活度(架空能量等于漏电节省时的活度)的后硅和在线表征。将该测试电路应用于节能SRAM的自适应功率门控设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-adaptive power gating with test circuit for on-line characterization of energy inflection activity

A test circuit is presented for post-silicon and on-line characterization of the energy-inflection activity of power-gated circuits (the activity when overhead energy is equal to leakage savings) under static (process) and dynamic (voltage/temperature/input) variations. The test circuit is applied to design self-adaptive power-gating for energy-efficient SRAM.

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2012 IEEE 30th VLSI Test Symposium (VTS)

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