设计超低电源电压的模拟和射频电路

P. Kinget
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引用次数: 22

摘要

本文探讨了在超低电源电压下设计模拟和射频集成电路的挑战和机遇。讨论了从利用MOS器件的4个端子或阈值电压依赖于长度到使用只需要两个器件堆叠的电路拓扑的解决方案。演示了在超低电压下实现全模拟和射频系统功能,并介绍了使能架构的修改。本文提出的技术和结果旨在使超低电压模拟电路和RF电路在相对较大的阈值电压(例如|VT|=VDD)和较低的阈值电压下都能实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Designing analog and RF circuits for ultra-low supply voltages
This paper investigates the challenges and opportunities of designing analog and RF integrated circuits to operate from ultra-low supply voltages. Solutions ranging from exploiting the 4 terminals of a MOS device or the threshold voltage dependence on length, to the use of circuit topologies that require only stacks of two devices are discussed. The realization of full analog and RF system functions operating from ultra-low voltages is demonstrated and the enabling architecture modifications are introduced. The techniques and results presented in this paper aim to enable ultra-low voltage analog and RF circuits both in the context of relatively large threshold voltages, e.g., |VT|=VDD, as well as lower threshold voltages.
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