600V SOI栅极驱动HVIC适用于高达200/spl度/C的中功率应用

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487949

S. Pawel, M. Rossberg, R. Herzer

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引用次数: 13

摘要

介绍了一种完全集成的600V SOI栅极驱动集成电路的设计、功能和测量。七通道HVIC的目标是用于低功率和中功率应用的三相系统。绝缘器件隔离和详细的电路设计确保工作温度高达200/spl度/C。鲁棒信号处理在所有设计阶段都受到高度重视。提出了一种专用的信号重构拓扑结构，以最大限度地抵抗来自电源平面的寄生耦合。给出了验证集成电路安全运行的测试结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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600V SOI gate drive HVIC for medium power applications operating up to 200/spl deg/C

The design, functionality and measurements of a fully integrated 600V SOI gate drive IC are presented. The seven-channel HVIC is aimed at three-phase systems for low power and medium power applications. Dielectric device isolation and detailed circuit design ensure operation up to a temperature of 200/spl deg/C. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC are given.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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