IGBT关断失效及非均匀运行研究

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583642

J. Yamashita, E. Haruguchi, H. Hagino

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引用次数: 32

摘要

与稳态IGBT相比，IGBT在更小的工作区域内无法关断。本文通过实验和仿真，证明了非均匀操作降低了IGBT的关断SOA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study on the IGBT's turn-off failure and inhomogeneous operation

An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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