一种新颖的低功耗、高性能的多米诺逻辑设计技术

Sunil Kavatkar, Girish Gidaye
{"title":"一种新颖的低功耗、高性能的多米诺逻辑设计技术","authors":"Sunil Kavatkar, Girish Gidaye","doi":"10.1109/IBSS.2015.7456636","DOIUrl":null,"url":null,"abstract":"Domino logic circuits are most often used in high performance designs such as microprocessors because of high speed and less area over the static logic. But these domino logics suffer from high power dissipation and low noise tolerance. In this paper the earlier proposed techniques to reduce power consumption of Domino logic such as Dual Threshold Voltage (DTV), Dual Threshold Voltage-Voltage Scaling (DTVS) and Stacked Transistor Dual Threshold Voltage (ST-DTV) are analyzed. A novel technique using Dual Threshold Voltage technique with Stacked Transistor only in pull-up path along with Voltage Scaling and Charge Sharing technique is proposed in this paper. The proposed technique gives smaller power dissipation with better Power Delay Product (PDP) compared to earlier power reduction techniques. The gate length biasing technique can be used to further reduce the leakage power. The impact of gate length biasing on the proposed design is shown in the later part of the paper. The proposed design is simulated using 3 input OR gate at 28 nm bulk CMOS technology. The simulations are performed with Mentor Graphics ELDO 13.2 and EZ-wave simulators.","PeriodicalId":317804,"journal":{"name":"2015 IEEE Bombay Section Symposium (IBSS)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A novel low power, high performance design technique for domino logic\",\"authors\":\"Sunil Kavatkar, Girish Gidaye\",\"doi\":\"10.1109/IBSS.2015.7456636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Domino logic circuits are most often used in high performance designs such as microprocessors because of high speed and less area over the static logic. But these domino logics suffer from high power dissipation and low noise tolerance. In this paper the earlier proposed techniques to reduce power consumption of Domino logic such as Dual Threshold Voltage (DTV), Dual Threshold Voltage-Voltage Scaling (DTVS) and Stacked Transistor Dual Threshold Voltage (ST-DTV) are analyzed. A novel technique using Dual Threshold Voltage technique with Stacked Transistor only in pull-up path along with Voltage Scaling and Charge Sharing technique is proposed in this paper. The proposed technique gives smaller power dissipation with better Power Delay Product (PDP) compared to earlier power reduction techniques. The gate length biasing technique can be used to further reduce the leakage power. The impact of gate length biasing on the proposed design is shown in the later part of the paper. The proposed design is simulated using 3 input OR gate at 28 nm bulk CMOS technology. The simulations are performed with Mentor Graphics ELDO 13.2 and EZ-wave simulators.\",\"PeriodicalId\":317804,\"journal\":{\"name\":\"2015 IEEE Bombay Section Symposium (IBSS)\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Bombay Section Symposium (IBSS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IBSS.2015.7456636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Bombay Section Symposium (IBSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IBSS.2015.7456636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

Domino逻辑电路最常用于高性能设计(如微处理器),因为它速度快,占用静态逻辑的面积少。但这些多米诺骨牌逻辑存在高功耗和低噪声容忍度的问题。本文分析了先前提出的降低Domino逻辑功耗的技术,如双阈值电压(DTV)、双阈值电压-电压缩放(DTV)和堆叠晶体管双阈值电压(ST-DTV)。本文提出了一种利用双阈值电压技术与电压缩放和电荷共享技术在上拉路径上叠加晶体管的新技术。与早期的功耗降低技术相比,该技术具有更小的功耗和更好的功率延迟积(PDP)。栅极长度偏置技术可以进一步降低泄漏功率。栅极长度偏置对所提出的设计的影响将在本文的后半部分显示。采用3输入OR门的28纳米块体CMOS技术对所提出的设计进行了仿真。使用Mentor Graphics ELDO 13.2和EZ-wave模拟器进行仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel low power, high performance design technique for domino logic
Domino logic circuits are most often used in high performance designs such as microprocessors because of high speed and less area over the static logic. But these domino logics suffer from high power dissipation and low noise tolerance. In this paper the earlier proposed techniques to reduce power consumption of Domino logic such as Dual Threshold Voltage (DTV), Dual Threshold Voltage-Voltage Scaling (DTVS) and Stacked Transistor Dual Threshold Voltage (ST-DTV) are analyzed. A novel technique using Dual Threshold Voltage technique with Stacked Transistor only in pull-up path along with Voltage Scaling and Charge Sharing technique is proposed in this paper. The proposed technique gives smaller power dissipation with better Power Delay Product (PDP) compared to earlier power reduction techniques. The gate length biasing technique can be used to further reduce the leakage power. The impact of gate length biasing on the proposed design is shown in the later part of the paper. The proposed design is simulated using 3 input OR gate at 28 nm bulk CMOS technology. The simulations are performed with Mentor Graphics ELDO 13.2 and EZ-wave simulators.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信