A. Shafura, N. Sin, N. Azhar, M. Uzer, M. H. Mamat, S. Alrokayan, H. Khan, M. Rusop
{"title":"溶胶-凝胶法制备纳米掺铝zno基CH4传感器的灵敏度","authors":"A. Shafura, N. Sin, N. Azhar, M. Uzer, M. H. Mamat, S. Alrokayan, H. Khan, M. Rusop","doi":"10.1109/ICEESE.2014.7154614","DOIUrl":null,"url":null,"abstract":"The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH4) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 106 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%.","PeriodicalId":240050,"journal":{"name":"2014 2nd International Conference on Electrical, Electronics and System Engineering (ICEESE)","volume":"4 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method\",\"authors\":\"A. Shafura, N. Sin, N. Azhar, M. Uzer, M. H. Mamat, S. Alrokayan, H. Khan, M. Rusop\",\"doi\":\"10.1109/ICEESE.2014.7154614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH4) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 106 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%.\",\"PeriodicalId\":240050,\"journal\":{\"name\":\"2014 2nd International Conference on Electrical, Electronics and System Engineering (ICEESE)\",\"volume\":\"4 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Electrical, Electronics and System Engineering (ICEESE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEESE.2014.7154614\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electrical, Electronics and System Engineering (ICEESE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEESE.2014.7154614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH4) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 106 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%.