射频溅射氧化锌薄膜的电学和光学性能

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI:10.1109/ISAF.1990.200354

A. Arora, R. Srivastava, A. Mansingh

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引用次数: 1

摘要

采用射频溅射的方法，在室温衬底上制备了氧化锌薄膜。用干燥空气和氩气作为环境。靶-底物(T-S)距离在3 ~ 7 cm之间变化。生长的薄膜具有很高的电阻性，并且在不同(T-S)距离和不同环境下生长的薄膜在电学、光学和结构性能上没有显著差异

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Electrical and optical properties of RF sputtered zinc oxide films

Zinc oxide films were deposited by RF sputtering using an oxide target with a room-temperature substrate. Dry air and argon were used as ambients. The target-to-substrate (T-S) distance was varied between 3 cm and 7 cm. The as-grown films were highly resistive and there was no marked difference in the electrical, optical, and structural properties for the films grown at different (T-S) distances and in different ambients.<>

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来源期刊

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics

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