采用分压和偏置电平移位技术的1-V - 5ghz低相位噪声LC-VCO

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398174

Taeksang Song, E. Yoon

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引用次数: 11

摘要

在本文中，我们提出了一个1 V 5.2 GHz的压控振荡器，采用分压和偏置电平移位技术来防止负载q因子退化和增加振荡幅度。该VCO在1.0 V电源的3 mA偏置电流下，在5.2 GHz载波频率的1mhz偏置下实现了115.5 dBc/Hz的相位噪声。调谐范围是450兆赫通过改变从0伏到1.0伏的控制偏置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique

In this paper, we present a 1 V 5.2 GHz VCO using voltage-dividing and bias-level shifting technique to prevent loaded Q-factor degradation and increase oscillation amplitude. The proposed VCO achieves a phase noise of 115.5 dBc/Hz at 1 MHz offset from a 5.2 GHz carrier frequency with 3 mA bias current from 1.0 V power supply. Tuning range is 450 MHz by changing the control bias from 0 V to 1.0 V.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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