高k封装MoS2晶体管对I-V测量执行时间的敏感性

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2018-03-19 DOI:10.1109/ICMTS.2018.8383789

P. Bolshakov, A. Khosravi, P. Zhao, R. Wallace, C. Young, P. Hurley

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引用次数: 0

摘要

制备了高k封装M0S2场效应晶体管，并对其进行了电学表征。比较了HfO2和AkO3封装MoS2 fet的I-V响应和执行时间。栅极电压阶跃和积分时间的变化表明，电特性参数可以显著影响器件参数，如亚阈值摆幅和阈值电压。

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Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time

High-k encapsulated M0S2 field-effect-transistors were fabricated and electrically characterized. Comparison between HfO2 and AkO3 encapsulated MoS2 FETs and their I-V response to execution time are shown. Changes in gate voltage step and integration time demonstrate that electrical characterization parameters can significantly impact device parameters such as the subthreshold swing and the threshold voltage.

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2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)

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