{"title":"基于短通道MOSFET的解析噪声抑制模型","authors":"V. Jain, P. Zarkesh-Ha","doi":"10.1109/ISQED.2008.166","DOIUrl":null,"url":null,"abstract":"Due to scaling down of semiconductor technology, modern deep-submicron VLSI circuits are becoming increasingly vulnerable to noise from multiple sources, including cross-talk, radiation-induced single event transient, and power supply noises. Noise Rejection Curve (NRC) has been used as a metric to model noise susceptibility of logic circuits to such sources. In this paper an analytical model for NRC, which includes short channel effects, is presented. The model uses only basic SPICE parameters and does not include any calibration parameter. Comparison with SPICE simulations using TSMC 0.25 um CMOS process parameters, suggests that the proposed model can accurately predict NRC characteristic of variety of logic circuits.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analytical Noise-Rejection Model Based on Short Channel MOSFET\",\"authors\":\"V. Jain, P. Zarkesh-Ha\",\"doi\":\"10.1109/ISQED.2008.166\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to scaling down of semiconductor technology, modern deep-submicron VLSI circuits are becoming increasingly vulnerable to noise from multiple sources, including cross-talk, radiation-induced single event transient, and power supply noises. Noise Rejection Curve (NRC) has been used as a metric to model noise susceptibility of logic circuits to such sources. In this paper an analytical model for NRC, which includes short channel effects, is presented. The model uses only basic SPICE parameters and does not include any calibration parameter. Comparison with SPICE simulations using TSMC 0.25 um CMOS process parameters, suggests that the proposed model can accurately predict NRC characteristic of variety of logic circuits.\",\"PeriodicalId\":243121,\"journal\":{\"name\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2008.166\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
由于半导体技术的缩小,现代深亚微米VLSI电路越来越容易受到来自多个来源的噪声的影响,包括串扰、辐射诱发的单事件瞬态和电源噪声。噪声抑制曲线(NRC)已被用作一种度量来模拟逻辑电路对此类源的噪声敏感性。本文提出了考虑短信道效应的核反应堆分析模型。该模型仅使用基本SPICE参数,不包括任何校准参数。与采用台积电0.25 μ m CMOS工艺参数的SPICE仿真结果比较,表明该模型能够准确预测各种逻辑电路的NRC特性。
Analytical Noise-Rejection Model Based on Short Channel MOSFET
Due to scaling down of semiconductor technology, modern deep-submicron VLSI circuits are becoming increasingly vulnerable to noise from multiple sources, including cross-talk, radiation-induced single event transient, and power supply noises. Noise Rejection Curve (NRC) has been used as a metric to model noise susceptibility of logic circuits to such sources. In this paper an analytical model for NRC, which includes short channel effects, is presented. The model uses only basic SPICE parameters and does not include any calibration parameter. Comparison with SPICE simulations using TSMC 0.25 um CMOS process parameters, suggests that the proposed model can accurately predict NRC characteristic of variety of logic circuits.