{"title":"场效应发光二极管集成提高空穴利用率","authors":"Matthew Hartensveld, Jing Zhang","doi":"10.1109/DRC50226.2020.9135145","DOIUrl":null,"url":null,"abstract":"The performance of Gallium Nitride (GaN) light emitting diodes (LEDs) continues to be limited due to poor hole activation in p-type GaN. In this work, the field effect is applied to an LED though integration of the p-type layer with a capacitor. Additional band bending created is used to modulate all the holes in the p-type layer, leading to enhanced external quantum efficiency (EQE). Due to the additional hole utilization, the EQE is improved by a dramatic 115% over the conventional LED. The capacitor integration additionally creates a method of voltage control for LED, instead of current control. With additional holes being utilized, the work further explores the device as a means to mitigate the efficiency droop problem of LEDs.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Field Effect Light-Emitting Diode Integration for Enhanced Hole Utilization\",\"authors\":\"Matthew Hartensveld, Jing Zhang\",\"doi\":\"10.1109/DRC50226.2020.9135145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of Gallium Nitride (GaN) light emitting diodes (LEDs) continues to be limited due to poor hole activation in p-type GaN. In this work, the field effect is applied to an LED though integration of the p-type layer with a capacitor. Additional band bending created is used to modulate all the holes in the p-type layer, leading to enhanced external quantum efficiency (EQE). Due to the additional hole utilization, the EQE is improved by a dramatic 115% over the conventional LED. The capacitor integration additionally creates a method of voltage control for LED, instead of current control. With additional holes being utilized, the work further explores the device as a means to mitigate the efficiency droop problem of LEDs.\",\"PeriodicalId\":397182,\"journal\":{\"name\":\"2020 Device Research Conference (DRC)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Device Research Conference (DRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC50226.2020.9135145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC50226.2020.9135145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field Effect Light-Emitting Diode Integration for Enhanced Hole Utilization
The performance of Gallium Nitride (GaN) light emitting diodes (LEDs) continues to be limited due to poor hole activation in p-type GaN. In this work, the field effect is applied to an LED though integration of the p-type layer with a capacitor. Additional band bending created is used to modulate all the holes in the p-type layer, leading to enhanced external quantum efficiency (EQE). Due to the additional hole utilization, the EQE is improved by a dramatic 115% over the conventional LED. The capacitor integration additionally creates a method of voltage control for LED, instead of current control. With additional holes being utilized, the work further explores the device as a means to mitigate the efficiency droop problem of LEDs.
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