MEMS用硅衬底GaN发光二极管的制备

2012 International Conference on Optical MEMS and Nanophotonics Pub Date : 2012-10-04 DOI:10.1109/OMEMS.2012.6318787

T. Tanae, H. Kawaguchi, A. Iwabuchi, K. Hane

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引用次数: 0

摘要

在硅衬底上制备了可用于MEMS的悬浮膜GaN发光二极管。采用生长在硅衬底上的GaN LED层进行制作。采用深度反应离子蚀刻法(deep reactive ion etching, DRIE)去除Si衬底，生成GaN LED的悬空膜结构。尽管有DRIE，但在制备的薄膜LED中没有观察到降解。采用带光栅的薄膜结构，实现了波长选择性发射。

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Fabrication of freestanding membrane GaN light-emitting diode on Si substrate for MEMS applications

Freestanding membrane GaN light emitting diode (LED) was fabricated on Si substrate for MEMS applications. GaN LED layer grown on Si substrate was used for the fabrication. Removing Si substrate by deep reactive ion etching (DRIE), the freestanding membrane structure of GaN LED was generated. In spite of the DRIE, no degradation was observed in the fabricated membrane LED. Using the membrane structure with grating, wavelength selective emission was obtained.

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2012 International Conference on Optical MEMS and Nanophotonics

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