MESFET中双连接栅极的影响

Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000] Pub Date : 2000-07-01 DOI:10.1109/ANTEM.2000.7851673

A. Freundorfer

{"title":"MESFET中双连接栅极的影响","authors":"A. Freundorfer","doi":"10.1109/ANTEM.2000.7851673","DOIUrl":null,"url":null,"abstract":"For the single connected gate common-source transistor, in a 0.8µm MESFET process, f<inf>max</inf> was measured to be 50 GHz and for the double connected gate f<inf>max</inf> was 58GHz. There is better than 16% improvement in bandwidth of the double connected gate over the single connected gate. The reduced R<inf>g</inf> due to the double connection on the gate should contribute to a lower noise transistor. It was also shown that for the common gate transistor f<inf>max</inf> also increased.","PeriodicalId":416991,"journal":{"name":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The effects of a double connected gate in a MESFET\",\"authors\":\"A. Freundorfer\",\"doi\":\"10.1109/ANTEM.2000.7851673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the single connected gate common-source transistor, in a 0.8µm MESFET process, f<inf>max</inf> was measured to be 50 GHz and for the double connected gate f<inf>max</inf> was 58GHz. There is better than 16% improvement in bandwidth of the double connected gate over the single connected gate. The reduced R<inf>g</inf> due to the double connection on the gate should contribute to a lower noise transistor. It was also shown that for the common gate transistor f<inf>max</inf> also increased.\",\"PeriodicalId\":416991,\"journal\":{\"name\":\"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]\",\"volume\":\"204 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ANTEM.2000.7851673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.2000.7851673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

对于单连接栅极共源晶体管，在0.8µm MESFET工艺中，fmax测量为50 GHz，对于双连接栅极fmax测量为58GHz。双连接栅极的带宽比单连接栅极提高了16%以上。由于栅极上的双连接而降低的Rg应该有助于降低晶体管的噪声。结果表明，对于普通栅极晶体管，fmax也有所增加。

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The effects of a double connected gate in a MESFET

For the single connected gate common-source transistor, in a 0.8µm MESFET process, fmax was measured to be 50 GHz and for the double connected gate fmax was 58GHz. There is better than 16% improvement in bandwidth of the double connected gate over the single connected gate. The reduced Rg due to the double connection on the gate should contribute to a lower noise transistor. It was also shown that for the common gate transistor fmax also increased.

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Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]

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