低电压(1.2V)和高性能移动DRAM器件技术与双多晶硅栅极采用等离子体氮化栅极氧化物

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356586

S. Hong, B. Koo, T. Jeon, S. Hyun, Y. Shin, U. Chung, J. Moon

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引用次数: 0

摘要

研究了等离子体氮化栅氧化工艺，并将其应用于低工作电压移动DRAM中。因此，我们证实了等离子体氮化栅极氧化物可以阻止硼在DRAM中的渗透，这比其他器件具有更高的热预算。研究了氮键的状态和分布，以检查晶体管和栅极氧化物特性的变化。

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Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide

The plasma nitrided gate oxide process has been developed and applied for mobile DRAM with low operating voltage. As a result, we confirm that plasma nitrided gate oxide can block the boron penetration in DRAM, which has a higher thermal budget than other devices. The nitrogen bonding status and profile are investigated to check the change in transistor and gate oxide characteristics.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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