常压炉热CVD制备垂直排列碳纳米管场致发射器件

2005 International Vacuum Nanoelectronics Conference Pub Date : 2005-07-10 DOI:10.1109/IVNC.2005.1619595

S. Wei, W. Kang, J. Davidson, W. Hofmeister, B. Choi, J.H. Huang

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引用次数: 0

摘要

本文采用常压炉热气相沉积法制备了垂直排列的碳纳米管场发射器件。在真空(/spl sim/10/sup -6/ torr)中进行了场发射特性测试。开路面积约为3 V//spl mu/m，与其他地方报告的数据相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Vertically aligned carbon nanotubes field emission devices fabricated by furnace thermal CVD at atmospheric pressure

In this paper, vertically aligned carbon nanotubes field emission devices were fabricated from the as grown carbon nanotubes (CNTs) by furnace thermal CVD at atmospheric pressure. The device was tested in vacuum (/spl sim/10/sup -6/ torr) for field emission characterization. The turn-on field was about 3 V//spl mu/m, which is comparable to data reported elsewhere.

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2005 International Vacuum Nanoelectronics Conference

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