一种廉价的检测静态RAM局部参数缺陷的方法

Records of the 1993 IEEE International Workshop on Memory Testing Pub Date : 1993-08-09 DOI:10.1109/MT.1993.263143

Y. Savaria, C. Thibeault

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引用次数: 3

摘要

作者提出了一种有效的测试SRAM电路中引起延迟故障的点缺陷的方法，而不必对芯片中的每个单元进行全速测试。该方法是将不平衡效应转化为永久误差，通过对记忆细胞造成的不平衡来检测斑点缺陷。这种测试可以在低速下进行，同时保留检测非灾难性斑点缺陷的出色能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An inexpensive method of detecting localised parametric defects in static RAM

The author presents an effective method of testing spot defects causing delay faults in SRAM circuits, without having to perform a full speed test of every single cell in a chip. The method is based on the detection of spot defects through the imbalance they cause to memory cells by transforming the imbalance effect into a permanent error. Such tests may be performed at a low speed, while retaining an excellent ability to detect non-catastrophic spot defects.<>

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Records of the 1993 IEEE International Workshop on Memory Testing

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