开关自箝位模式“SSCM”作为高压igbt过电压保护功能的研究

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487952

Munaf T. A. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder

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引用次数: 29

摘要

本文从器件物理和电路工作两方面对高压igbt中开关自箝位模式“SSCM”进行了研究。本文分析了由于负阻尼系统不稳定而导致的HV-IGBT在SSCM中运行时的失效模式，并考虑了避免这种运行模式的设计考虑。这使得在器件关断期间引入过压保护功能，以增加在短路条件下现有的过流保护能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study of switching-self-clamping-mode "SSCM" as an over-voltage protection feature in high voltage IGBTs

In this paper, we study the switching-self-clamping-mode "SSCM" in high voltage IGBTs in terms of device physics and circuit operation. We present analysis for the HV-IGBT failure mode when operating in SSCM due to an unstable negatively damped system and the design consideration taken into account for avoiding such mode of operation. This enables the introduction of an over-voltage protection feature during device turn-off to add to the existing over-current protection capability under short circuit conditions.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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