一种3-20 GHz SiGe HBT超宽带LNA，具有增益和回波损耗控制，适用于多频段无线应用

2010 53rd IEEE International Midwest Symposium on Circuits and Systems Pub Date : 2010-08-16 DOI:10.1109/MWSCAS.2010.5548729

D. Howard, J. Poh, Tonmoy S. Mukerjee, J. Cressler

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引用次数: 13

摘要

我们提出了一种采用硅锗异质结双极晶体管(SiGe HBT)技术实现的超宽带低噪声放大器(LNA)。该SiGe LNA是宽带，覆盖3-20 GHz的频率范围，峰值增益为21.3 dB。SiGe LNA在8-18 GHz频段的噪声系数(NF)为4.2-5.2 dB，从3.3 V电源消耗35.2 mA。

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A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 3–20 GHz, and achieves a peak gain of 21.3 dB. The SiGe LNA exhibits a Noise Figure (NF) of 4.2–5.2 dB across an 8–18 GHz band and consumes 35.2 mA from a 3.3 V supply.

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2010 53rd IEEE International Midwest Symposium on Circuits and Systems

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