以聚对二甲苯为侧壁保护层的硅通孔(TSV)自底向上填充

M. Miao, Yunhui Zhu, Ming Ji, Shengli Ma, Xin Sun, Yufeng Jin
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引用次数: 14

摘要

在本文中,我们介绍了最近的进展,以简化通过最后的TSV工艺流程。通过填充工艺将与衬底景观具有良好一致性的聚对二甲苯沉积引入TSV盲管中,实现了均匀的侧壁保护。模拟分析了聚对二甲苯侧壁对高纵横比盲孔内电场分布的影响,结果表明,利用聚对二甲苯侧壁可以实现均匀的电镀电流密度分布,从而保证无空隙填充。然后在实验微细加工中,采用聚对二甲苯侧壁保护,以较高的速率实现了大比长宽面的盲式TSV的自下而上填充。此外,在我们的实验中,提出了一种“自下而上加非自下而上”的填充方法,并在微加工试验中证明了其以更高的速率填充TSV盲孔的潜在能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bottom-up filling of Through Silicon Via (TSV) with Parylene as sidewall protection layer
In this paper, we present our recent advances in streamlining via-last TSV process flow. Parylene deposition, which is of excellent conformability to the substrate landscape, was introduced into TSV blind via filling process to realize uniform sidewall protection. Simulation was made to analyze the impacts of Parylene sidewall on the electric field distribution inside a blind via with high aspect ratios during electroplating, which indicates that a uniform plating current density distribution may be achieved with the help of the Parylene sidewall, and thus a void-free filling can be guaranteed. Then in experimental microfabrication runs, with Parylene sidewall protection, we achieved bottom-up filling of blind TSV of large ratio aspect at a higher rate. Besides, during our experiments, a “bottom-up plus non-bottom-up” filling methodology is proposed and the microfabrication trials demonstrate its potential capability of filling TSV blind via at a much higher rate.
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