Yeong-Tsair Lin, Wen-Yaw Chung, Dong-Shiuh Wu, Ho-Cheng Lin, R. Lin
{"title":"一个低电压CMOS带隙基准","authors":"Yeong-Tsair Lin, Wen-Yaw Chung, Dong-Shiuh Wu, Ho-Cheng Lin, R. Lin","doi":"10.1109/NEWCAS.2005.1496749","DOIUrl":null,"url":null,"abstract":"In this paper, a low voltage bandgap reference (LVBR) is proposed and analyzed. An nMOS arrangement folded operational transconductance amplifier (OTA) is developed for the LVBR. From the Hspice simulation results, the proposed LVBR can be operated with sub-1V supply. The LVBR circuit, occupied an area of 0.12 mm/sup 2/, is design and fabricated in a doubly-poly quadruple-metal 0.35-/spl mu/m CMOS process. The circuit functions properly with minimum supply voltage of 0.88 V and consumes a power dissipation of 25 /spl mu/W. The circuit also provides a temperature coefficient of 20 ppm/K over a temperature range from -20 to 100/spl deg/C.","PeriodicalId":131387,"journal":{"name":"The 3rd International IEEE-NEWCAS Conference, 2005.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A low voltage CMOS bandgap reference\",\"authors\":\"Yeong-Tsair Lin, Wen-Yaw Chung, Dong-Shiuh Wu, Ho-Cheng Lin, R. Lin\",\"doi\":\"10.1109/NEWCAS.2005.1496749\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a low voltage bandgap reference (LVBR) is proposed and analyzed. An nMOS arrangement folded operational transconductance amplifier (OTA) is developed for the LVBR. From the Hspice simulation results, the proposed LVBR can be operated with sub-1V supply. The LVBR circuit, occupied an area of 0.12 mm/sup 2/, is design and fabricated in a doubly-poly quadruple-metal 0.35-/spl mu/m CMOS process. The circuit functions properly with minimum supply voltage of 0.88 V and consumes a power dissipation of 25 /spl mu/W. The circuit also provides a temperature coefficient of 20 ppm/K over a temperature range from -20 to 100/spl deg/C.\",\"PeriodicalId\":131387,\"journal\":{\"name\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 3rd International IEEE-NEWCAS Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2005.1496749\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 3rd International IEEE-NEWCAS Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2005.1496749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a low voltage bandgap reference (LVBR) is proposed and analyzed. An nMOS arrangement folded operational transconductance amplifier (OTA) is developed for the LVBR. From the Hspice simulation results, the proposed LVBR can be operated with sub-1V supply. The LVBR circuit, occupied an area of 0.12 mm/sup 2/, is design and fabricated in a doubly-poly quadruple-metal 0.35-/spl mu/m CMOS process. The circuit functions properly with minimum supply voltage of 0.88 V and consumes a power dissipation of 25 /spl mu/W. The circuit also provides a temperature coefficient of 20 ppm/K over a temperature range from -20 to 100/spl deg/C.
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