采用28nm FD-SOI技术直接测量0.120µm2 SRAM细胞的动态变异性

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894415

J. El Husseini, X. Garros, A. Subirats, A. Makosiej, O. Weber, O. Thomas, V. Huard, X. Federspiel, G. Reimbold

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引用次数: 2

摘要

利用一种基于供电读保持电压(SRRV)度量的新技术，直接测量了28nm FD-SOI高密度sram的动态变化，并仔细建模。事实证明，对于该技术，经过10年的工作条件，N&PBTI诱导的变异性对SRAM读取稳定性的影响很小。

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Direct measurement of the dynamic variability of 0.120µm2 SRAM cells in 28nm FD-SOI technology

Dynamic variability of 28nm FD-SOI high density SRAMs has been directly measured and carefully modeled using a new technique based on the Supply Read Retention Voltage (SRRV) metric. It is proven that, for this technology, N&PBTI induced variability has only a small impact on the SRAM read stability after 10 years working at operating conditions.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量