低功耗斜坡沟道双栅MOSFET的仿真研究

2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC) Pub Date : 2019-07-01 DOI:10.1109/CSQRWC.2019.8799128

Maolin Zhang, Yufeng Guo, J. Chen, Jun Zhang, Jiafei Yao

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引用次数: 1

摘要

双栅MOSFET (DG MOSFET)由于增强了栅极控制能力，对短沟道效应(sce)有很好的抑制作用，但需要极大地减小沟道厚度。为了解决这些挑战，我们提出了一种新的斜沟道双栅极MOSFET (SCDG MOSFET)，以提高亚阈值性能，同时保持沟道厚度。仿真结果表明，与传统的DG MOSFET相比，SCDG MOSFET的亚阈值性能有了很大的提高。其主要机制是由于通道电位的降低而抑制了sce。

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Simulation Study of the Slope-Channel Double-Gate MOSFET for Low-Power Applications

Double-Gate MOSFET (DG MOSFET) shows great suppression of the Short Channel Effects (SCEs) due to the enhanced gate-control capability but requires the extreme downscaling of channel thickness. To address these challenges, we propose a novel Slope-Channel Double-Gate MOSFET (SCDG MOSFET) to enhance the subthreshold performances while maintaining the channel thickness. The simulation results show that the SCDG MOSFET greatly improves the subthreshold performances compared to the conventional DG MOSFET. The main mechanism is the suppression of the SCEs attributed to the reduction of channel potential.

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2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC)

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