集成光子器件的微阵列选择性外延

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773752

K. Kudo, T. Nakazaki, M. Yamaguchi

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引用次数: 2

摘要

我们开发了一种新的技术，称为微阵列选择性外延(MASE)，用于选择性地生长极小的PICs。MASE可以在不需要半导体蚀刻的情况下形成密集排列(间距<10 /spl mu/m)的多量子阱(MQW)波导，并同时将每个MQW的带隙波长控制在300 nm以上的波长范围内。

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Microarray selective epitaxy (MASE) for integrated photonic devices

We developed a novel technique, called microarray selective epitaxy (MASE), for selectively growing extremely small PICs. MASE can form densely arrayed (pitch<10 /spl mu/m) multiple-quantum-well (MQW) waveguides, without the need for semiconductor etching, and simultaneously control the bandgap-wavelength of each MQW in the over-300-nm wavelength range.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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