{"title":"多晶硅发射体的技术与物理","authors":"H. Schaber, T. Meister","doi":"10.1109/BIPOL.1989.69463","DOIUrl":null,"url":null,"abstract":"Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of forward transit time and speed limitations of polysilicon emitter devices are examined.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Technology and physics of polysilicon emitters\",\"authors\":\"H. Schaber, T. Meister\",\"doi\":\"10.1109/BIPOL.1989.69463\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of forward transit time and speed limitations of polysilicon emitter devices are examined.<<ETX>>\",\"PeriodicalId\":189201,\"journal\":{\"name\":\"Proceedings of the Bipolar Circuits and Technology Meeting\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Bipolar Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1989.69463\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Bipolar Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1989.69463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of forward transit time and speed limitations of polysilicon emitter devices are examined.<>
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