高迁移率HfO/ sub2 / mosfet中电活性缺陷的研究

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356519

L. Militaru, O. Weber, M. Muller, F. Ducroquet, D. Dusciac, C. Plossu, T. Ernst, B. Guillaumot, S. Deleonibus, T. Skotnicki

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引用次数: 3

摘要

我们详细分析了HfO/sub - 2/栅极介质和TiN/W栅极电极在damascene CMOS器件上的电活性栅极氧化物缺陷。通过对高质量nMOS和pMOS晶体管的2级和3级电荷抽运分析，确定了界面态密度(D/sub it/)和捕获氧化物电荷(N/sub it/)。此外，我们讨论了栅极堆积缺陷对通道中载流子迁移率的影响，并将栅极氧化物缺陷密度的降低与电子和空穴迁移率的提高联系起来。

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Study of electrically active defects in high mobility HfO/sub 2/ MOSFETs

We present a detailed analysis of electrically active gate oxide defects on damascene CMOS devices with a HfO/sub 2/ gate dielectric and a TiN/W gate electrode. The interface state density (D/sub it/) and the trapped oxide charge (N/sub it/) are determined by 2 and 3-level charge pumping analysis on high-quality nMOS and pMOS transistors. Furthermore, we discuss the influence of the gate stack defects on the carrier mobility in the channel and correlate the reduction of the gate oxide defect density to a mobility improvement for both electrons and holes.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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