嵌入掺杂多层石墨烯纳米带互连的宽度优化

B. Kumari, Manodipan Sahoo
{"title":"嵌入掺杂多层石墨烯纳米带互连的宽度优化","authors":"B. Kumari, Manodipan Sahoo","doi":"10.1109/ISDCS.2018.8379653","DOIUrl":null,"url":null,"abstract":"In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Width optimization of intercalation doped multilayer graphene nanoribbon interconnects\",\"authors\":\"B. Kumari, Manodipan Sahoo\",\"doi\":\"10.1109/ISDCS.2018.8379653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在这项工作中,我们利用基于ABCD参数的模型,通过最小化11 nm技术节点的中间和全局级互连的串扰延迟和噪声参数,优化了多层石墨烯纳米带(MLGNR)互连的宽度。观察到,中间电平宽度为10 ~ 20nm,全局电平宽度为50 ~ 100nm的完美和近镜面(即P=1和0.8)MLGNR互连具有较小的串扰延迟和更强的抗噪声能力。与Cu相比,完美和近镜面mlgnr在中间和全局级的延迟方面都优于Cu,但只有全局级互连具有比Cu更好的抗噪声能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Width optimization of intercalation doped multilayer graphene nanoribbon interconnects
In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信