{"title":"嵌入掺杂多层石墨烯纳米带互连的宽度优化","authors":"B. Kumari, Manodipan Sahoo","doi":"10.1109/ISDCS.2018.8379653","DOIUrl":null,"url":null,"abstract":"In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Width optimization of intercalation doped multilayer graphene nanoribbon interconnects\",\"authors\":\"B. Kumari, Manodipan Sahoo\",\"doi\":\"10.1109/ISDCS.2018.8379653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Width optimization of intercalation doped multilayer graphene nanoribbon interconnects
In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.