{"title":"太赫兹发射的n型SiGe/Ge超晶格结构","authors":"J. Halpin, M. Myronov, S. Rhead, D. Leadley","doi":"10.1109/ISTDM.2014.6874635","DOIUrl":null,"url":null,"abstract":"Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"N-type SiGe/Ge superlattice structures for terahertz emission\",\"authors\":\"J. Halpin, M. Myronov, S. Rhead, D. Leadley\",\"doi\":\"10.1109/ISTDM.2014.6874635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
N-type SiGe/Ge superlattice structures for terahertz emission
Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
