氦控制局部寿命和电阻率的实验分析

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488000

S. Daliento, L. Mele, P. Spirito, L. Gialanella, M. Romano, B. Limata, R. Carta, L. Bellemo

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摘要

本文对氦在硅中的注入效应进行了实验研究。已分析了1倍1010 - 5倍1011原子/平方厘米范围内的剂量。结果表明，随着剂量的增加，可达到的最小寿命出现饱和效应，而材料的电阻率出现明显的影响。电阻率的温度依赖性表明，这种变化是由于与带隙中位于Ec-0.23 eV的能级相关的陷阱效应引起的，该能级与氦注入引起的主要复合中心相同

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An experimental analysis of localized lifetime and resistivity control by Helium

In this work we present an experimental study on the effects of helium implantation in silicon. Doses in the range 1 times 1010 - 5 times 1011 atoms/cm2 have been analysed. Results show that, increasing the dose, a saturation effect on the minimum lifetime that can be achieved occurs, while a marked effect on the resistivity of the material appears. The temperature dependence of the resistivity show that changes are due to a trap effect related to an energy level in the bandgap placed at Ec-0.23 eV that is the same of the dominant recombination center induced by helium implantation

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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