{"title":"高性能GaN-on-Si功率开关:衬底偏置在器件特性中的作用","authors":"R. Chu, D. Zehnder, B. Hughes, K. Boutros","doi":"10.1109/DRC.2011.5994508","DOIUrl":null,"url":null,"abstract":"Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"High performance GaN-on-Si power switch: Role of substrate bias in device characteristics\",\"authors\":\"R. Chu, D. Zehnder, B. Hughes, K. Boutros\",\"doi\":\"10.1109/DRC.2011.5994508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance GaN-on-Si power switch: Role of substrate bias in device characteristics
Field-effect transistors based on the low-cost GaN-on-Si platform are promising candidates for highefficiency power switching at high frequencies. We have reported a normally-off GaN-on-Si switch with a blocking voltage of 1200V, and a very low dynamic on-resistance [1]. For future improvement of the GaN-on-Si switching technology, it is important to understand the role of the non-insulating Si-substrate in device characteristics. In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.