InP异质结双极晶体管功率放大器中行积累层的蒙特卡罗研究

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972778

Jonathan P. Sculley, B. Markman, Utku Soylu, Yihao Fang, M. Urteaga, A. Carter, M. Rodwell, P. Yoder

{"title":"InP异质结双极晶体管功率放大器中行积累层的蒙特卡罗研究","authors":"Jonathan P. Sculley, B. Markman, Utku Soylu, Yihao Fang, M. Urteaga, A. Carter, M. Rodwell, P. Yoder","doi":"10.1109/BCICTS45179.2019.8972778","DOIUrl":null,"url":null,"abstract":"We report Monte Carlo simulation results of 300nm InP heterojunction bipolar transistors driven to exhibit distortion. IM3 distortion is typically explained by collector velocity modulation. Full-band ensemble Monte Carlo simulations implicate intervalley transfer as an additional source of distortion under conditions of high current, low voltage, and high doping. Simulations reveal that intervalley transfer promotes the formation of traveling accumulation domains which result in high frequency distortion more significant than that caused by velocity modulation. Special care must be taken when designing high current HBT power amplifiers in order to mitigate this effect.","PeriodicalId":243314,"journal":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers\",\"authors\":\"Jonathan P. Sculley, B. Markman, Utku Soylu, Yihao Fang, M. Urteaga, A. Carter, M. Rodwell, P. Yoder\",\"doi\":\"10.1109/BCICTS45179.2019.8972778\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report Monte Carlo simulation results of 300nm InP heterojunction bipolar transistors driven to exhibit distortion. IM3 distortion is typically explained by collector velocity modulation. Full-band ensemble Monte Carlo simulations implicate intervalley transfer as an additional source of distortion under conditions of high current, low voltage, and high doping. Simulations reveal that intervalley transfer promotes the formation of traveling accumulation domains which result in high frequency distortion more significant than that caused by velocity modulation. Special care must be taken when designing high current HBT power amplifiers in order to mitigate this effect.\",\"PeriodicalId\":243314,\"journal\":{\"name\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"200 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS45179.2019.8972778\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS45179.2019.8972778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了300nm InP异质结双极晶体管驱动畸变的蒙特卡罗模拟结果。IM3失真通常由集电极速度调制来解释。全带集成蒙特卡罗模拟暗示谷间转移是在高电流、低电压和高掺杂条件下的附加失真源。模拟结果表明，谷间传输促进了行积累域的形成，导致比速度调制更严重的高频畸变。在设计大电流HBT功率放大器时必须特别小心，以减轻这种影响。

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Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers

We report Monte Carlo simulation results of 300nm InP heterojunction bipolar transistors driven to exhibit distortion. IM3 distortion is typically explained by collector velocity modulation. Full-band ensemble Monte Carlo simulations implicate intervalley transfer as an additional source of distortion under conditions of high current, low voltage, and high doping. Simulations reveal that intervalley transfer promotes the formation of traveling accumulation domains which result in high frequency distortion more significant than that caused by velocity modulation. Special care must be taken when designing high current HBT power amplifiers in order to mitigate this effect.

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来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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