{"title":"电荷耦合器件中的双栅电荷传感","authors":"G. S. Hobson, R. Longstone, R. C. Tozer","doi":"10.1049/IJ-SSED:19780058","DOIUrl":null,"url":null,"abstract":"A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Dual-gate charge sensing in charge-coupled devices\",\"authors\":\"G. S. Hobson, R. Longstone, R. C. Tozer\",\"doi\":\"10.1049/IJ-SSED:19780058\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780058\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-gate charge sensing in charge-coupled devices
A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.