高场脉冲应力作用下薄氧化物的应力诱发泄漏电流

Y. Tan, W. Chim, P. Lim
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引用次数: 1

摘要

当交流脉冲波形的脉冲间隔时间(T/sub - bp/)增大时,应力诱发泄漏电流(SILC)减小。随着应力电压幅值和应力脉冲宽度的增大,随着T/sub bp/的增加,硅质硅的减少量普遍减小。本文建立了一个模型,描述了单极和双极脉冲波形在瞬态高应力场中产生的陷阱和弛豫过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stress-induced leakage current in thin oxides under high-field impulse stressing
Stress-induced leakage current (SILC) decreases when the time-between-pulses (T/sub bp/) of an AC-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in T/sub bp/, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occurring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper.
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