双栅蓄能型SOI PMOSFET亚阈值性能研究

2007 7th International Conference on ASIC Pub Date : 2007-10-01 DOI:10.1109/ICASIC.2007.4415837

Zhang Zheng-fan, L. Zhaoji, Tan Kai-zhou, Zhang Jiabin

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引用次数: 3

摘要

本文描述了双栅积累模式p沟道SOI MOSFET的亚阈值摆幅分析模型。该模型基于Possion方程和耗尽近似，得到了亚阈值摆幅与栅极氧化物电容和界面阱密度的关系。通过实验和数值模拟对模型进行了验证。提出了一种基于亚阈值振荡的界面陷阱密度提取方法。

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Investigation into sub-threshold performance of double-gate accumulation-mode SOI PMOSFET

In this paper, an analytical model of sub-threshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion's equation and depletion approximation, and the relation of the sub-threshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with sub-threshold swing is proposed.

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2007 7th International Conference on ASIC

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