描述电荷阱快闪记忆的MLC保留的经验模型

2010 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2010-10-01 DOI:10.1109/IIRW.2010.5706502

T. Melde, R. Hoffmann, E. Yurchuk, J. Paul, T. Mikolajick

{"title":"描述电荷阱快闪记忆的MLC保留的经验模型","authors":"T. Melde, R. Hoffmann, E. Yurchuk, J. Paul, T. Mikolajick","doi":"10.1109/IIRW.2010.5706502","DOIUrl":null,"url":null,"abstract":"In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured results. The increasing non-linearity of the retention loss for thicker nitride layers is evaluated using this model. In addition, the strong temperature dependency of the TANOS stack is clarified.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An empirical model describing the MLC retention of charge trap flash memories\",\"authors\":\"T. Melde, R. Hoffmann, E. Yurchuk, J. Paul, T. Mikolajick\",\"doi\":\"10.1109/IIRW.2010.5706502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured results. The increasing non-linearity of the retention loss for thicker nitride layers is evaluated using this model. In addition, the strong temperature dependency of the TANOS stack is clarified.\",\"PeriodicalId\":332664,\"journal\":{\"name\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2010.5706502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一个描述电荷捕获存储单元的程序级电荷损失的公式。我们证明了保留损失可以用5个参数来计算，并且与实测结果非常吻合。利用该模型对氮化层厚度越厚，保留损失的非线性程度越高进行了评价。此外，澄清了TANOS堆栈的强温度依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An empirical model describing the MLC retention of charge trap flash memories

In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured results. The increasing non-linearity of the retention loss for thicker nitride layers is evaluated using this model. In addition, the strong temperature dependency of the TANOS stack is clarified.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE International Integrated Reliability Workshop Final Report

自引率

0.00%

发文量