在宽阻抗范围内具有低衰减的新型微机械重叠CPW结构

H. Kim, Sanghwa Jung, Jaehyoung Park, C. Baek, Yong-Kweon Kim, Y. Kwon
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引用次数: 16

摘要

为了在宽阻抗范围内实现低损耗,设计了一种新型的微机械覆盖型CPW,其中心导体边缘部分升高并与地面重叠。覆盖CPW通过降低电场浓度和信号线边缘的电流拥挤,有助于减少导体损耗。它还通过集中导体板之间的电场提供了屏蔽衬底损耗的效果。为了进行比较,我们在玻璃基板上模拟并制作了三种不同的CPW结构。覆盖CPW的阻抗范围最大,损耗最小。采用MEMS技术的覆盖CPW是毫米波频率下单平面传输线介质的理想选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new micromachined overlap CPW structure with low attenuation over wide impedance ranges
A new micromachined overlay CPW with the edges of the center conductor partially elevated and overlapped with the ground, is developed to achieve low loss over wide impedance ranges. Overlay CPW helped to reduce conductor loss by reducing field concentration and current crowding at the edges of the signal lines. It also offered a screening effect from the substrate losses by concentrating the electric field between the conductor plates. For comparison, three different CPW structures were simulated and fabricated on glass substrates. The overlay CPW showed the largest impedance range and the lowest loss. The overlay CPW using MEMS technology is a good candidate for a uniplanar transmission line medium at mm-wave frequencies.
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