精确的片上变化建模,实现可制造性设计

Keh-Jeng Chang
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引用次数: 8

摘要

非期望的片上变化(OCV)在规模化技术中变得更加突出。它们降低了VLSI/SoC的产量,即使三种可制造性设计(DFM)技术已被CMOS代工厂广泛采用,以提高铜基互连的均匀性。因此,提出了一种新的建模和DFM分析方法,从电路参数的角度而不是从工艺参数的角度准确地表征OCV。由此产生的OCV更直接,更容易在主流电子设计自动化(EDA)设计流程中实现,以确保高产量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate on-chip variation modeling to achieve design for manufacturability
Undesired on-chip variations (OCV) become more prominent in scaled technologies. They decrease VLSI/SoC yields even though three design-for-manufacturability (DFM) techniques have been widely adopted by CMOS foundries to enhance the uniformity of copper-based interconnect. A new modeling and DFM analysis methodology is therefore proposed to accurately characterize the OCV from the perspective of circuit parameters rather than from that of process parameters. The resulting OCV is more straightforward and easier to be implemented in the mainstream electronic design automation (EDA) design flows to insure high yields.
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